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? 2012 microchip technology inc. ds22308b-page 1 mcp87050 features: ? low drain-to-source on resistance (r ds(on) ) ? low total gate charge (q g ) and gate-to-drain charge (q gd ) ? low series gate resistance (r g ) ?fast switching ? capable of short dead-time operation ? rohs compliant applications ? point-of-load dc-dc converters ? high efficiency power management in servers, networking, and automotive applications description the mcp87050 is an n-channel power mosfet in a popular pdfn 5 mm x 6 mm package. advanced packaging and silicon processing technologies allow the mcp87050 to achieve a low q g for a given r ds(on) value, resulting in a low figure of merit (fom). combined with low r g , the low figure of merit of the mcp87050 allows high efficiency power conversion with reduced switching and conduction losses. package type product summary table: unless otherwise indicated, t a = +25 ? c parameters sym min typ max units conditions operating characteristics drain-to-source breakdown voltage bv dss 25 ? ? v v gs = 0v, i d = 250 a gate-to-source threshold voltage v gs(th) 11.31.6 vv ds = v gs , i d = 250 a drain-to-source on resistance r ds(on) ?5.06.0 m ? v gs = 4.5v, i d = 20a ?4.25.0 m ? v gs = 10v, i d = 20a total gate charge q g ?12.515 nc v ds = 12.5v, i d = 20a, v gs = 4.5v gate-to-drain charge q gd ?4.7 ? ncv ds = 12.5v, i d = 20a series gate resistance r g ?1.1 ? ? thermal characteristics thermal resistance junction-to-x r jx ??56 ? c/w note 1 thermal resistance junction-to-case r jc ??1.9 ? c/w note 2 note 1: r jx is determined with the device surface mounted on a 4-layer fr4 pcb, with a 1? x 1? mounting pad of 2 oz. copper. this characteristic is dependent on user?s board design. 2: r jc is determined using jedec 51-14 method. this characteristic is determined by design. s g s s d d d d 1 2 3 4 5 6 7 8 pdfn 5 x 6 high-speed n-channel power mosfet
mcp87050 ds22308b-page 2 ? 2012 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings ? v ds .......................................................................+25v v gs ........................................................... +10.0v / -8v i d, continuous ................................. 100a, t c = +25 ? c p d ..................................................... 2.2w, t a = +25 ? c t j , t stg .............................................. -55 ? c to +150 ? c e as avalanche energy ..................................... 162 mj i d =18a, l=1mh, r g =25 ? ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc electrical characteristics electrical characteristics: unless otherwise indicated, t a = +25c parameters sym min typ max units conditions static characteristics drain-to-source breakdown voltage b vdss 25 ? ? v v gs = 0v, i d = 250 a drain-to-source leakage current i dss ?? 1av gs = 0v, v ds = 20v gate-to-source leakage current i gss ??100nav ds = 0v, v gs = 10v/-8v gate-to-source threshold voltage v gs(th) 11.31.6vv ds = v gs , i d = 250 a drain-to-source on resistance r ds(on) ?56.0m ? v gs = 4.5v, i d = 20a ?4.2 5 m ? v gs = 10v, i d = 20a transconductance g fs ? 101 ? s v ds = 12.5v, i d = 20a dynamic characteristics input capacitance c iss ?1040? pfv gs = 0v, v ds = 12.5v, f = 1 mhz output capacitance c oss ?490? pfv gs = 0v, v ds = 12.5v, f = 1 mhz reverse transfer capacitance c rss ?140? pfv gs = 0v, v ds = 12.5v, f = 1 mhz total gate charge q g ? 12.5 15 nc v ds = 12.5v, i d = 20a, v gs = 4.5v gate-to-drain charge q gd ?4.7?ncv ds = 12.5v, i d = 20a gate-to-source charge q gs ?1.9?ncv ds = 12.5v, i d = 20a gate charge at v gs(th) q g(th) ?1.4?ncv ds = 12.5v, i d = 20a output charge q oss ?9.5?ncv ds = 12.5v, v gs = 0 turn-on delay time t d(on) ?5?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? rise time t r ?18?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? turn-off delay time t d(off) ?11?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? fall time t f ?5?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? series gate resistance r g ?1.1? ?
? 2012 microchip technology inc. ds22308b-page 3 mcp87050 diode characteristics diode forward voltage v fd ?0.8 1 vi s = 20a, v gs = 0v reverse recovery charge q rr ?20?nci s = 20a, di/dt = 300 a/s reverse recovery time t rr ?16?nsi s = 20a, di/dt = 300 a/s avalanche characteristics avalanche energy e as 50 ? ? mj i d = 10a, l = 1 mh, r g = 25 ? temperature characteristics electrical characteristics: unless otherwise indicated, t a = +25c parameters sym min typ max units conditions temperature ranges operating junction temperature range t j -55 ? 150 c storage temperature range t a -55 ? 150 c package thermal resistances thermal resistance junction-to-x, 8l 5x6-pdfn r jx ??56c/w note 1 thermal resistance junction-to-case, 8l 5x6-pdfn r jc ??1.9c/w note 2 note 1: r jx is determined with the device surface mounted on a 4-layer fr4 pcb, with a 1? x 1? mounting pad of 2 oz. copper. this characteristic is dependent on user?s board design. 2: r jc is determined using jedec 51-14 method. this characteristic is determined by design. dc electrical characteristics (continued) electrical characteristics: unless otherwise indicated, t a = +25c parameters sym min typ max units conditions
mcp87050 ds22308b-page 4 ? 2012 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, t a = +25c. figure 2-1: typical output characteristics. figure 2-2: typical transfer characteristics. figure 2-3: on resistance vs. gate-to- source voltage. figure 2-4: normalized on resistance vs. temperature. figure 2-5: gate-to-source voltage vs. gate charge. figure 2-6: capacitance vs. drain-to- source voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0 10 20 30 40 50 60 70 80 0.00.51.01.52.0 v ds - drain to source voltage (v) v gs = 2.5v v gs = 3v v gs = 10v v gs = 4.5v i d - drain current (a) v ds - drain-to-source voltage (v) 0 10 20 30 40 50 60 70 80 1.25 1.5 1.75 2 2.25 2.5 2.75 3 i d - drain current (a) v gs - gate to source voltage (v) t c = 25 c t c = 125 c v ds = 5v t c = -55 c v gs - gate-to-source voltage (v) i d - drain current (a) 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 r ds(on) - on-state resistance v gs - gate to source voltage (v) t c = +25 c t c = +125 c i d = 20a r ds(on) - on-state resistance (m ? ) v gs - gate-to-source voltage (v) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 normalized on-state resistance t c - case temperature ( c) i d = 20a v gs = 4.5v normalized on-state resistance 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 q g - gate charge (nc) i d = 20a v ds = 5v v ds = 12.5v v gs - gate-to-source voltage (v) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 20 v ds - drain to source voltage (v) c oss c iss c rss f= 1mhz v gs = 0v c - capacitance (nf) v ds - drain-to-source voltage (v)
? 2012 microchip technology inc. ds22308b-page 5 mcp87050 note: unless otherwise indicated, t a = +25c. figure 2-7: gate-to-source threshold voltage vs. temperature. figure 2-8: source-to-drain current vs. source-to-drain voltage. figure 2-9: maximum safe operating area. figure 2-10: maximum drain current vs. temperature. figure 2-11: transient thermal impedance. figure 2-12: single-pulse unclamped inductive switching. 0.7 0.9 1.1 1.3 1.5 1.7 -75 -50 -25 0 25 50 75 100 125 150 175 t c - case temperature ( c) i d = 250ua voltage (v) v gs(th) - gate-to-source threshold 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 v sd - source to drain voltage (v) t c = 25 c t c = 125 c i sd - source-to-drain current (a) v sd - source-to-drain voltage (v) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain to source voltage (v) dc 1s 100ms 10ms 1ms operation in this range is limited by rds(on) r ja = 56 c/w single pulse 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( ?c) v gs = 4.5v v gs = 10v 0.001 0.01 0.1 1 0.001 0.1 10 1000 t 1 - pulse duration (s) dc = 0.5 dc = 0.3 dc = 0.1 dc = 0.05 dc = 0.02 dc = 0.01 single pulse z ? ja - normalized thermal impedance 1 10 100 0.01 0.1 1 10 100 ias - avalanche current (a) tav - avalanche time (ms) tc = 25 c tc = 150 c
mcp87050 ds22308b-page 6 ? 2012 microchip technology inc. note: unless otherwise indicated, t a = +25c. figure 2-13: drain-to-source breakdown voltage vs. temperature. 26 27 28 29 30 31 -60 -40 -20 0 20 40 60 80 100 120 140 160 v br(dss) - breakdown voltage (v) t c - case temperature ( c) i d = 250 a v br(dss) - b reakdown voltage (v)
? 2012 microchip technology inc. ds22308b-page 7 mcp87050 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . table 3-1: pinout description for the mcp87050 mcp87050 pin type function 5x6 pdfn 1, 2, 3 s source pin 4 g gate pin 5, 6, 7, 8 d drain pin, including exposed thermal pad
mcp87050 ds22308b-page 8 ? 2012 microchip technology inc. 4.0 packaging information 4.1 package marking information* pin 1 nnn pin 1 8-lead pdfn (5x6x1.0 mm) example *rohs compliant using eu-rohs exemption: 7(a) - lead in high-melting-temperature-type sol ders (i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. 87050 u/mf ^^ 1219 256 3 e legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e pin 1 nnn pin 1 8-lead pdfn (5x6x1.0 mm) example 87050 u/mf ^^ 1219 256 3 e 3 e
? 2012 microchip technology inc. ds22308b-page 9 mcp87050
mcp87050 ds22308b-page 10 ? 2012 microchip technology inc.
? 2012 microchip technology inc. ds22308b-page 11 mcp87050
mcp87050 ds22308b-page 12 ? 2012 microchip technology inc. notes:
? 2012 microchip technology inc. ds22308b-page 13 mcp87050 appendix a: revision history revision b (november 2012) ? updated the q gd value in the product summary table and the dc electrical characteristics table. ? updated the thermal resistance junction-to- case value in the temperature characteristics table. ?replaced figure 2-10 and figure 2-13 . revision a (september 2012) ? original release of this document.
? 2012 microchip technology inc. ds22308b-page 14 mcp87050 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. x /xx package temperature range device device : mcp87050t: n-channel power mosfet (tape and reel) (pdfn) temperature range : u = -55c to +150c (ultra high) package : mf = plastic dual flat, no lead package (5x6x1.0 mm body) (pdfn), 8-lead example: a) mcp87050t-u/mf: tape and reel, extended temperature, 8ld pdfn package
? 2012 microchip technology inc. ds22308b-page 15 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-62076-665-1 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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